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diff --git a/bibliography.bib b/bibliography.bib index 8ece99a..4befec0 100644 --- a/bibliography.bib +++ b/bibliography.bib @@ -7602,3 +7602,34 @@ doi = {10.1080/09500340.2016.1148212}, url = {https://link.aps.org/doi/10.1103/RevModPhys.87.637} } +@article{henry1982ieee, + title = {Theory of the Linewidth of Semiconductor Lasers}, + author = {C. Henry}, + journal = {IEEE Journal of Quantum Electronics}, + volume = {18}, + issue = {2}, + pages = {259--264}, + year = {1982}, + doi = {IEEE Journal of Quantum Electronics}, + abstract = {A theory of the spectral width of a single-mode + semiconductor laser is presented and used to explain the recent + measurements of Fleming and Mooradian on AlGaAs lasers. + They found the linewidth to be inversely proportional + to power and to have a value of 114 MHz at 1 mW per + facet. This value is 30 times greater than can be + explained by existing theories. The enhanced linewidth + is attributed to the variation of the real refractive + indexn'with carrier density. Spontaneous emission + induces phase and intensity changes in the laser field. + The restoration of the laser to its steady-state + intensity results in changes in the imaginary part of + the refractive index\Delta n". These changes are + accompanied by changes in the real part of the + refractive index\Delta n', which cause additional phase + fluctuations and line broadening. The linewidth + enhancement is shown to be1 + \alpha^{2}, where\alpha = + \Delta n'/\Delta n". A value of\alpha \approx 5.4, + needed to explain the observed linewidth, is close to the + experimental values of a of 4.6 and 6.2.} +} + |